Ground state of an electron in a field of Coulomb impurities in antiferromagnets //Fiz. Tverd. Tela (Leningrad), 1985, v.37, №3, p.669-672

      The localization of conduction electrons subjected to a Coulomb impurity field in an antiferromagnet is studied. The states of localized electrons are classified in the continuum approximation for an isotropic antiferromagnet and their induced local magnetization is analyzed both in the absence of an external magnetic field and in such a magnetic field. The results are applied to real crystals.
      Self-localization of carriers in an ideal antiferromagnet is prevented by a potential barrier due to the short range nature of the interaction of conduction electrons with the magnetic system of a crystal. The existence of the potential barrier may give rise to many special effects even if the electron capture takes place without the influence of a barrier, as is the case for electron localization at an impurity with a long-range Coulomb potential. It is the aim of the present paper to analyze such a situation in antiferromagnets.